SEMIX303GB12E4S(2009) Ver la hoja de datos (PDF) - Semikron

Número de pieza

componentes Descripción

Fabricante

SEMIX303GB12E4S
(Rev.:2009)

Trench IGBT Modules

Semikron 

SEMiX303GB12E4s

Fig. 7: Typ. switching times vs. IC

Fig. 8: Typ. switching times vs. gate resistor RG

Fig. 9: Typ. transient thermal impedance

Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'

Fig. 11: Typ. CAL diode peak reverse recovery current

Fig. 12: Typ. CAL diode recovery charge

4

Rev. 4 – 16.12.2009

© by SEMIKRON

Share Link: