SEMIX303GB12E4S(2009) Ver la hoja de datos (PDF) - Semikron
Número de pieza
componentes Descripción
Fabricante
SEMIX303GB12E4S Datasheet PDF : 6 Pages
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SEMiX303GB12E4s
SEMiX® 3s
Trench IGBT Modules
SEMiX303GB12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 300 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
IF = 300 A
Tj = 150 °C
di/dtoff = 5100 A/µs
VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
res., terminal-chip TC = 25 °C
TC = 125 °C
Rth(c-s)
Ms
Mt
per module
to heat sink (M5)
to terminals (M6)
w
Temperatur Sensor
R100
B100/125
Tc=100°C (R25=5 kΩ)
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min.
typ.
max. Unit
2.2
2.52
V
2.2
2.5
V
1.1
1.3
1.5
V
0.7
0.9
1.1
V
2.7
3.0
3.4
mΩ
3.5
4.2
4.6
mΩ
300
A
44.2
µC
17.7
mJ
0.18 K/W
20
nH
0.7
mΩ
1
mΩ
0.04
K/W
3
5
Nm
2.5
5
Nm
Nm
300
g
493 ± 5%
Ω
3550
±2%
K
GB
2
Rev. 4 – 16.12.2009
© by SEMIKRON
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