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RT5N431C

Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type

Isahaya Electronics 

RT5N431C

Transistor With Resistor

For Switching Application

Silicon NPN Epitaxial Type

DESCRIPTION

OUTLINE DRAWING

RT5N431C is a one chip transistor with built-in bias

resistor.

2.5

0.5

1.5 0.5

FEATURE

Built-in bias resistor （R1=4.7kΩ, R2=4.7kΩ）

High collector current （Ic=0.5A）

Mini package for easy mounting

①

②

③

APPLICATION

Inverted circuit, Switching circuit, Interface circuit,

Driver circuit

Unit: mm

R1

①

B R2

(IN)

③C

(OUT)

②E

(GND)

JEITA：SC-59

①：BASE

②：EMITTER

③：COLLECTOR

MAXIMUM RATING (Ta=25℃)

SYMBOL

VCBO

VEBO

VCEO

IC

PC

Tj

Tstg

PARAMETER

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

Collector dissipation(Ta=25℃)

Junction temperature

Storage temperature

RATING

50

-10

30

50

500

200

＋150

-55〜＋150

UNIT

V

V

V

mA

mW

℃

℃

MARKING

N .３

ELECTRICAL CHARACTERISTICS (Ta=25℃)

SYMBOL

V I(on)

V I(off)

VCE(sat)

IBE

ICES

GI

R1

R2/R1

fT

PARAMETER

Input on voltage

Input off voltage

C to E saturation voltage

B to E current

Collector cut off current

DC forward current gain

Input resistor

Resistor ratio

Gain band width product

TEST CONDITION

VCE=0.3V，IC=20mA

VCE=5V，IC=100μA

IC=50mA，IB=2.5mA

VEB=5V

VCE=50V，VBE=0V

VCE=5V，IE=50mA

―

―

VCE=10V，IE=-5mA，f=100MHz

MIN

―

0.5

―

―

―

47

3.29

0.8

―

LIMIT

TYP

―

―

0.1

―

―

―

4.7

1

200

MAX

3

―

0.3

1.8

0.5

―

6.11

1.2

―

UNIT

V

V

V

mA

μA

―

kΩ

MHz

ISAHAYA ELECTRONICS CORPORATION

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