RJP30E2DPP-M0 Ver la hoja de datos (PDF) - Renesas Electronics

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componentes Descripción

Fabricante

RJP30E2DPP-M0

Silicon N Channel IGBT High Speed Power Switching / Vce(sat) = 1.7V typ

Renesas Electronics 

RJP30E2DPP-M0

Electrical Characteristics

Item

Symbol Min

Zero gate voltage collector current

ICES

—

Gate to emitter leak current

IGES

—

Gate to emitter cutoff voltage

VGE(off)

2.5

Collector to emitter saturation voltage VCE(sat)

—

Input capacitance

Cies

—

Output capacitance

Coes

—

Reveres transfer capacitance

Cres

—

Total gate charge

Qg

—

Gate to emitter charge

Qge

—

Gate to collector charge

Qgc

—

Switching time

td(on)

—

tr

—

td(off)

—

tf

—

Notes: 3. Pulse test.

Preliminary

Typ

—

—

—

1.7

1160

60

26

34

6

10

0.03

0.1

0.08

0.15

Max

1

±100

5

2.2

—

—

—

—

—

—

—

—

—

—

Unit

μA

nA

V

V

pF

pF

pF

nC

nC

nC

μs

μs

μs

μs

(Ta = 25°C)

Test Conditions

VCE = 360 V, VGE = 0

VGE = ± 30 V, VCE = 0

VCE = 10 V, IC = 1 mA

IC = 35 A, VGE = 15 V Note3

VCE = 25 V

VGE = 0

f = 1 MHz

VGE = 15 V

VCE = 150 V

IC = 35 A

IC = 35 A

RL = 4.5 Ω

VGE = 15 V

RG = 5 Ω

R07DS0347EJ0200 Rev.2.00

Apr 12, 2011

Page 2 of 6

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