RD70HVF1 Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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RD70HVF1 Datasheet PDF : 8 Pages
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
Ta=+25°C
50 f=175MHz
Po
Vdd=12.5V
Idq=2A
40
30
Gp
20
100
80
ηｄ
60
40
10
0
10
Ｉｄｄ
20
30
Pin(dBm)
20
0
40
Pin-Po CHARACTERISTICS @f=175MHz
100
100
Po
80
80
ηd
60
60
40
Ta=25°C
40
f=175MHz
Vdd=12.5V
Idq=2A
20
20
Idd
0
0
0
2
4
6
8
10
Pin(W)
Pin-Po CHARACTERISTICS @f=520MHz
50
Ta=+25°C
f=520MHz
Po
40
Vdd=12.5V
Idq=2A
100
80
ηｄ
30
60
20
Gp
10
40
Ｉｄｄ
20
0
0
10
20
30
40
Pin(dBm)
Pin-Po CHARACTERISTICS @f=520MHz
70
70
Po
60
60
50
50
ηd
40
40
30
Ta=25°C
30
f=520MHz
20
Vdd=12.5V
20
Idq=2A
Idd
10
10
0
0
0
5
10
15
20
Pin(W)
Vdd-Po CHARACTERISTICS @f=175MHz
100
80
60
Ta=25°C
f=175MHz
Pin=6W
Idq=2A
Zg=ZI=50 ohm
40
20
0
4
6
8
10
Vdd(V)
20
18
Po
16
14
12
Idd
10
8
6
4
2
0
12 14
Vdd-Po CHARACTERISTICS @f=520MHz
70
12
Ta=25°C
60 f=520MHz
Pin=10W
Idq=2A
50 Zg=ZI=50 ohm
40
Po
10
8
Idd
6
30
4
20
2
10
0
4
6
8
10
12
14
Vdd(V)
RD70HVF1
MITSUBISHI ELECTRIC
3/8
10 Jan 2006
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