PXT3904 Ver la hoja de datos (PDF) - Philips Electronics
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PXT3904 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistor
Product specification
PXT3904
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
105
K/W
25
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
F
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
IE = 0; VCB = 30 V
−
IC = 0; VEB = 6 V
−
VCE = 1 V; (see Fig.2)
IC = 0.1 mA
60
IC = 1 mA
80
IC = 10 mA
100
IC = 50 mA
60
IC = 100 mA
30
IC = 10 mA; IB = 1 mA
−
IC = 50 mA; IB = 5 mA
−
IC = 10 mA; IB = 1 mA
650
IC = 50 mA; IB = 5 mA
−
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
IC = ic = 0; VEB = 500 mV; f = 1 MHz −
IC = 10 mA; VCE = 20 V; f = 100 MHz 300
IC = 100 µA; VCE = 5 V; RS = 1 kΩ; −
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 10 mA; IBon = 1 mA;
−
IBoff = −1 mA
−
−
−
−
−
MAX. UNIT
50
nA
50
nA
−
−
300
−
−
200 mV
200 mV
850 mV
950 mV
4
pF
8
pF
−
MHz
5
dB
65
ns
35
ns
35
ns
240 ns
200 ns
50
ns
1999 Apr 14
3
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