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NTRV4101PT1G Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza
componentes Descripción
Fabricante
NTRV4101PT1G
Twtysemi
TY Semiconductor Twtysemi
NTRV4101PT1G Datasheet PDF : 2 Pages
1 2
Product specification
THERMAL RESISTANCE RATINGS
NTR4101P, NTRV4101P
Parameter
Symbol
Max
Unit
JunctiontoAmbient Steady State (Note 1)
RqJA
170
°C/W
JunctiontoAmbient t < 10 s (Note 1)
RqJA
100
JunctiontoAmbient Steady State (Note 2)
RqJA
300
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
2. Surfacemounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 4)
(VGS = 0 V, ID = 250 mA)
Zero Gate Voltage Drain Current (Note 4)
(VGS = 0 V, VDS = 16 V)
GatetoSource Leakage Current
(VGS = ±8.0 V, VDS = 0 V)
TY CHARACTERISTICS
Gate Threshold Voltage (Note 4)
(VGS = VDS, ID = 250 mA)
DraintoSource OnResistance
(VGS = 4.5 V, ID = 1.6 A)
(VGS = 2.5 V, ID = 1.3 A)
(VGS = 1.8 V, ID = 0.9 A)
Forward Transconductance (VDS = 5.0 V, ID = 2.3 A)
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VGS = 0 V, f = 1 MHz, VDS = 10 V)
Total Gate Charge
GatetoSource Gate Charge
GatetoDrain “Miller” Charge
Gate Resistance
(VGS = 4.5 V, VDS = 10 V, ID = 1.6 A)
(VDS = 10 V, ID = 1.6 A)
(VDS = 10 V, ID = 1.6 A)
SWITCHING CHARACTERISTICS (Note 5)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VGS = 4.5 V, VDS = 10 V,
ID = 1.6 A, RG = 6.0 W)
Fall Time
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
(VGS = 0 V, IS = 2.4 A)
Reverse Recovery Time
Charge Time
Discharge Time
(VGS = 0 V,
dISD/dt = 100 A/ms, IS = 1.6 A)
Reverse Recovery Charge
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
5. Switching characteristics are independent of operating junction temperature.
http://www.twtysemi.com
sales@twtysemi.com
Symbol
Min
Typ
V(BR)DSS
20
IDSS
IGSS
VGS(th)
RDS(on)
gFS
0.4
0.72
70
90
112
7.5
Ciss
675
Coss
100
Crss
75
QG(tot)
7.5
QGS
1.2
QGD
2.2
RG
6.5
td(on)
tr
td(off)
tf
7.5
12.6
30.2
21.0
VSD
0.82
trr
12.8
ta
9.9
tb
3.0
Qrr
1008
4008-318-123
Max
1.0
±100
1.2
85
120
210
8.5
1.2
15
Unit
V
mA
nA
V
mW
S
pF
nC
nC
nC
W
ns
V
ns
ns
ns
nC
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