DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NTR4101P Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
NTR4101P
ONSEMI
ON Semiconductor ONSEMI
NTR4101P Datasheet PDF : 5 Pages
1 2 3 4 5
NTR4101P, NTRV4101P
Trench Power MOSFET
−20 V, Single P−Channel, SOT−23
Features
Leading −20 V Trench for Low RDS(on)
−1.8 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint
NTRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Load/Power Management for Portables
Load/Power Management for Computing
Charging Circuits and Battery Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±8.0 V
Continuous Drain
Current (Note 1)
Steady TA = 25°C
ID
State
TA = 85°C
−2.4 A
−1.7
t 10 s TA = 25°C
−3.2
Power Dissipation
(Note 1)
Steady TA = 25°C PD
State
0.73 W
t 10 s
1.25
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady TA = 25°C
ID
State
TA = 85°C
TA = 25°C
PD
−1.8 A
−1.3
0.42 W
Pulsed Drain Current
ESD Capability (Note 3)
tp = 10 ms
C = 100 pF,
RS = 1500 W
IDM
−18
A
ESD
225
V
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VGS = −8 V, IL = −1.8 Apk, L = 10 mH,
RG = 25 W)
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
TJ,
TSTG
IS
EAS
−55 to °C
150
−2.4 A
16
mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
V(BR)DSS
−20 V
RDS(ON) TYP
70 mW @ −4.5 V
90 mW @ −2.5 V
112 mW @ −1.8 V
ID MAX
−3.2 A
P−Channel MOSFET
S
G
D
MARKING DIAGRAM &
PIN ASSIGNMENT
3
3
Drain
1
2
SOT−23
CASE 318
STYLE 21
TR4 MG
G
1
Gate
2
Source
TR4 = Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTR4101PT1G SOT−23
NTRV4101PT1G (Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
October, 2016 − Rev. 12
Publication Order Number:
NTR4101P/D

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]