MMBT2222AWT1 Ver la hoja de datos (PDF) - Willas Electronic Corp.
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MMBT2222AWT1 Datasheet PDF : 3 Pages
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WILLAS
FM120-M+
MMBT2222AWTHTR1U
1G.0AeSnUReFArCaElMPOUuNrTpSCoHOsTeTKTY BrAaRnRIsERisREtCoTrIFsIERS -20V- 200V
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Features
Package outline
•EBLaEtCchTRprIoCcAeLssCdHeAsiRgnA,CeTxcEeRllIeSnTt IpCoSw(eTr Ad=is2s5ip°Catuionnleossffeotrhserwise noted) (Continued)
better reverse leakage current and thermal resistance.
• Low profile surface mountCehdaarapcptleicriasttiiocn in order to
Symbol
Min SOD-1M23aHx
Unit
OoNptCimHiAzeRbAoCaTrdEsRpIaScTeI.CS (1)
• Low pDoCweCrulroresnst,Ghaiginh(e1f)ficiency.
• High c(IuCr=re0n.t1cmaApadcb,ilVityC,El=ow10foVrdwca) rd voltage drop.
• High s(IuCr=ge1.c0ampaAbdicli,tVy. CE = 10 Vdc)
• Guard(IriCn=g1f0ormoAvdecr,vVolCtaE g=e10prVodtec)ction.
• Ultra (hIiCg=h-1s5p0emedAdscw,iVtchCEin=g1.0 Vdc)
•
•
Silico(nI
Ce=p
i5ta0x0imalApdlac,nVa
rc
CE
h= i
1p0,
mVdecta)
l
silicon
junction.
Lead-free parts meet environmental standards of
MIL-SCToDlle-c1t9o5r–0E0m/2itt2e8r Saturation Voltage(1)
• RoHS(pI rCo=du1c5t0fomrApdacc,kIinBg=c1o5dme Asudfcfi)x "G"
hFE
VCE(sat)
35
50
75
100
40
0.146(3.7)
0.130(3.3)
––
––
––
—
––
––
0.3
––
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Vdc
Halog(eInC f=re5e0p0rmodAudcct,foI rB =pa5c0kimngAdcoc)de suffix "H"
––
1.0
MechBaasen–iEcmaittel rdSaatutration Voltage(1)
V BE(sat)
Vdc
• Epoxy(I :CU=L19540-mV0Adrac,teI dB =fla1m5 me Aredtca)rdant
(I C = 500 mAdc, I B = 50 mAdc)
• Case : Molded plastic, SOD-123H
,
y •STMeArmLiLn–aSlsIG:PNlaAteLdCteHrAmRinAaClsT, EsoRldISeTraICblSe per MIL-STD-750
Method 2026
Current–Gain — Bandwidth Product
r •
Po
l
a
r(itI
y
C
:=I
n20d
imcaAtdecd,
bVyCcE=at2h0oVddec,bfa=nd100
MHz)
0.6
––
0.031(0.8) Typ.
1.2
2.0
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
fT
Dimen3s0io0ns in inches –a–nd (millimeteMrsH) z
• MounOtinutgpuPtoCsaitpioacnit:aAncney
a • Weigh(Vt :CAB=pp10roVxdimc,aItEe=d 00,.0f 1=11g.0raMmHz)
C obo
––
8.0
pF
Input Capacitance
in (VMEAB =X0I.M5 UVdMc, RI CA=T0I,Nf =G1S.0AMNHDz)
ELECTRICAL
CHARACTERCIiSbo TICS
––
30
pF
Ratings at 25℃Inpaumt bImiepnetdteamncpeerature unless otherwise specified.
Single phase h(aVlf CwE=av1e0, V60dHc,zI, Cre=s1is0tivmeAodfci,nfd=uc1ti.v0eklHoza)d.
h ie
0.25
1.25
kΩ
lim For
capacitive
Vlooaldta,gdeeFraetedcbuarcreknRt abtyio20%
(V CE= 1R0AVTdINc,GISC = 10 mAdc,
f
=
1.0
SkHYMz)BOL
FM120-MH
h re
FM130-MH FM140-MH
FM150-MH
––
FM160-MH
4.0
FM180-MH
X 10 –4
FM1100-MH FM1150-MH
FM1200-MH
UN
Marking Code Small–Signal Current Gain
12
Maximum Recur(reVnCtEP=e1a0k RVedvce, rIsCe=V1o0ltamgeAdc, f = 1.0 kHVzR)RM
20
13
30
14h fe 15
7156
40
50
60
13875
80
10 — 115
100
150
120
200 Vol
Output Admittance
e Maximum RMS Voltage
VRMS
14
21
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
r Maximum DC BloNcokiisnegFVioglutarege
VDC
20
30
P Maximum Averag(Ve FCEo=rw1a0rdVRdce,cItifCie=d 1C0u0rreµnAtdc, R S= 1.0 kIOΩ, f = 1.0 kHz)
28h oe 35
40
50
NF
2452
52600
60
80
–– 1.0
4.0
70µmhos 105
100
150
dB
140 Vol
200 Vol
Am
Peak FoSrwWarIdTSCuHrgIeNCGurCreHntA8.R3 mAsCsTinEglRe IhSalTf sICineS-wave IFSM
30
Am
superimposed on rated load (JEDEC method)
Typical ThermDaellaRyeTsiismtaence (Note 2)(V CC = 3.0 Vdc, V BER=Θ–JA0.5 Vdc
td
— 40
10
℃/W
Typical JunctRioisneCTaipmaecitance (Note I1C) = 150 mAdc, I B1 =C1J5 mAdc)
tr
— 120
25
ns
PF
Operating TeSmtoprearagteurTeimReange (V CC = 30 Vdc, I C = 1T5J0 mAdc
-55 to +125 t s
—
225-55 to +150 ns
℃
Storage TemFpaelrlaTtuimreeRange
I B1 = I B2 = 15 mAdc)TSTG
- 65 to +175
tf
—
60
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximu1m. PFuolrsweaTrdesVto: lPtauglseeaWt 1i.d0tAh D<C300 µs, Duty Cycle V<F 2.0%.
0.50
0.70
0.85
0.9
0.92 Vol
Maximum Average Reverse Current at @T A=25℃
Rated DOCrBdloeckrining VgolItangfeormation@TA=125℃
IR
0.5
mAm
10
NOTES:
Device
Marking
Shipping
1- MeasureMd MatB1TM2H2Z22aAndWaTp1plied reversPe1voltage of 4.0 V3D0C0.0/Tape&Reel
2- Thermal Resistance From Junction to Ambient
20122-10112-06
WILLWASILELALSECETLRECOTNRICONCIOCRCPO.RP.
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