ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 10 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Source Leakage Current (VGS = $ 8.0 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate−Source Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 3.6 A)
(VGS = 2.5 Vdc, ID = 3.1 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 5.0 Vdc, VGS = 0 V,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 16 Vdc, ID = 2.8 Adc,
Vgs = 4.5 V, RG = 2.3 W)
Fall Time
Gate Charge
(VDS = 16 Vdc, ID = 1.75 Adc,
VGS = 4.0 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Voltage
(IS = 1.0 Adc, VGS = 0 Vdc) (Note 3)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Qgs
Qgd
VSD
Reverse Recovery Time
(IS = 1.0 Adc, VGS = 0 Vdc,
dlS/ dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
Product specification
MGSF2N02EL
Min
Typ
Max
Unit
20
−
−
22
−
Vdc
−
mV/°C
mAdc
−
−
1.0
−
−
10
−
−
"100
nA
0.5
−
1.0
Vdc
−
−2.3
−
mV/°C
mW
−
78
85
−
105
115
−
150
−
pF
−
130
−
−
45
−
−
6.0
−
ns
−
95
−
−
28
−
−
125
−
−
3.5
−
nC
−
0.6
−
−
1.5
−
V
−
0.76
1.2
−
−
−
−
104
−
ns
−
42
−
−
62
−
−
0.20
−
mC
ORDERING INFORMATION
Device
MGSF2N02ELT1
MGSF2N02ELT1G
MGSF2N02ELT3
MGSF2N02ELT3G
http://www.twtysemi.com
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
sales@twtysemi.com
Shipping†
3,000 Tape & Reel
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