BSM 50 GB 170 DN2
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
100
A
17V
IC
80
15V
13V
11V
70
9V
7V
60
50
40
30
20
10
0
0.0 1.0 2.0 3.0 4.0
V
6.0
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
200
A
IC 160
140
120
100
80
60
40
20
0
0
2
4
6
8 10 V 14
VGE
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
100
A
17V
IC
80
15V
13V
11V
70
9V
7V
60
50
40
30
20
10
0
0.0 1.0 2.0 3.0 4.0
V
6.0
VCE
Semiconductor Group
5
Jul-31-1996