BSM50GB170DN2 Ver la hoja de datos (PDF) - Infineon Technologies

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BSM50GB170DN2

IGBT Power Module

Infineon Technologies 

BSM 50 GB 170 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

td(on)

VCC = 1200 V, VGE = 15 V, IC = 50 A

RGon = 27 Ω

-

350

Rise time

tr

VCC = 1200 V, VGE = 15 V, IC = 50 A

RGon = 27 Ω

-

150

Turn-off delay time

td(off)

VCC = 1200 V, VGE = -15 V, IC = 50 A

RGoff = 27 Ω

-

650

Fall time

tf

VCC = 1200 V, VGE = -15 V, IC = 50 A

RGoff = 27 Ω

-

90

ns

700

300

1000

140

Free-Wheel Diode

Diode forward voltage

VF

IF = 50 A, VGE = 0 V, Tj = 25 °C

-

IF = 50 A, VGE = 0 V, Tj = 125 °C

-

Reverse recovery time

trr

IF = 50 A, VR = -1200 V, VGE = 0 V

diF/dt = -600 A/µs, Tj = 125 °C

-

Reverse recovery charge

Qrr

IF = 50 A, VR = -1200 V, VGE = 0 V

diF/dt = -600 A/µs

Tj = 25 °C

-

Tj = 125 °C

-

V

2.3

2.8

2.1

-

µs

0.3

-

µC

4

-

12

-

Semiconductor Group

3

Jul-31-1996

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