BSM300GA170DN2E3166 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSM300GA170DN2E3166 Datasheet PDF : 9 Pages
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BSM300GA170DN2 E3166
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, RG = 5.6 Ω
10 4
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, IC = 300 A
10 4
ns
t
10 3
10 2
tdoff
tdon
tr
tf
ns
t
10 3
10 2
tdoff
tdon
tr
tf
10 1
0
100 200 300 400 500
A 700
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, RG = 5.6 Ω
1000
mWs
E 800
Eon
700
600
500
400
300
200
Eoff
100
0
0
100 200 300 400 500
A 700
IC
10 1
0
5
10
15
20
Ω
30
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, IC = 300 A
1000
mWs
E 800
700
600
500
400
Eon
300
200
100
0
0
Eoff
5
10
15
20
Ω
30
RG
Semiconductor Group
7
Jul-31-1996
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