BSM300GA170DN2E3166 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSM300GA170DN2E3166 Datasheet PDF : 9 Pages
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BSM300GA170DN2 E3166
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 300 A
20
V
VGE 16
14
800 V
1200 V
12
10
8
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 µC 4.5
QGate
Reverse biased safe operating area
ICpuls = f(VCE) , Tj = 150°C
parameter: VGE = 15 V
2.5
Typ. capacitances
C = f (VCE)
parameter: VGE = 0, f = 1 MHz
10 2
nF
C
10 1
Ciss
Coss
10 0
Crss
10 -1
0
5 10 15 20 25 30 V 40
VCE
Short circuit safe operating area
ICsc = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 20 nH
12
ICpuls/IC
1.5
1.0
0.5
ICsc/IC
8
6
4
2
0.0
0
250 500 750 1000 1250 1500 V 2000
VCE
0
0 250 500 750 1000 1250 1500 V 2000
VCE
Semiconductor Group
6
Jul-31-1996
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