BSM300GA170DN2E3166 Ver la hoja de datos (PDF) - Infineon Technologies
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BSM300GA170DN2E3166 Datasheet PDF : 9 Pages
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BSM300GA170DN2 E3166
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
• RG on,min = 5.6 Ohm
Type
VCE IC
Package
BSM300GA170DN2 E3166 1700V 440A SINGLE SWITCH 1
Ordering Code
C67070-A2710-A67
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
Vis
-
-
-
-
Values
Unit
1700
V
1700
± 20
A
440
300
880
600
W
2500
+ 150
°C
-55 ... + 150
≤ 0.05
K/W
≤ 0.1
4000
Vac
20
mm
11
F
-
55 / 150 / 56
Semiconductor Group
1
Jul-31-1996
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