BSM150GB170DN2E3166 Ver la hoja de datos (PDF) - Infineon Technologies
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BSM150GB170DN2E3166 Datasheet PDF : 9 Pages
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BSM150GB170DN2 E3166
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, RG = 10 Ω
10 4
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, IC = 150 A
10 4
ns
t
10 3
10 2
tdoff
tdon
tr
tf
ns
t
10 3
10 2
tdoff
tdon
tr
tf
10 1
0
50 100 150 200 250 A 350
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, RG = 10 Ω
400
10 1
0
10
20
30
40
Ω
60
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 1200 V, VGE = ± 15 V, IC = 150 A
400
mWs
E
300
mWs
Eon
E
300
250
250
200
200
Eon
150
Eoff
100
50
0
0 50 100 150 200 250 A 350
IC
150
100
50
0
0
Eoff
10
20
30
40
Ω
60
RG
Semiconductor Group
7
Aug-01-1996
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