BSM150GB170DN2E3166 Ver la hoja de datos (PDF) - Infineon Technologies
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BSM150GB170DN2E3166 Datasheet PDF : 9 Pages
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BSM150GB170DN2 E3166
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
VCC = 1200 V, VGE = 15 V, IC = 150 A
RGon = 10 Ω
-
Rise time
tr
VCC = 1200 V, VGE = 15 V, IC = 150 A
RGon = 10 Ω
-
Turn-off delay time
td(off)
VCC = 1200 V, VGE = -15 V, IC = 150 A
RGoff = 10 Ω
-
Fall time
tf
VCC = 1200 V, VGE = -15 V, IC = 150 A
RGoff = 10 Ω
-
520
200
1200
110
ns
1000
400
1800
160
Free-Wheel Diode
Diode forward voltage
VF
IF = 150 A, VGE = 0 V, Tj = 25 °C
-
IF = 150 A, VGE = 0 V, Tj = 125 °C
-
Reverse recovery time
trr
IF = 150 A, VR = -1200 V, VGE = 0 V
diF/dt = -1200 A/µs, Tj = 125 °C
-
Reverse recovery charge
Qrr
IF = 150 A, VR = -1200 V, VGE = 0 V
diF/dt = -1200 A/µs
Tj = 25 °C
-
Tj = 125 °C
-
V
2
2.5
1.8
-
µs
0.7
-
µC
14
-
50
-
Semiconductor Group
3
Aug-01-1996
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