BSM100GB170DN2 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSM100GB170DN2

IGBT Power Module

Infineon Technologies 

BSM 100 GB 170 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE(th)

V

VGE = VCE, IC = 8 mA

4.8

5.5

6.2

Collector-emitter saturation voltage

VCE(sat)

VGE = 15 V, IC = 100 A, Tj = 25 °C

-

3.4

3.9

VGE = 15 V, IC = 100 A, Tj = 125 °C

-

4.5

5.3

Zero gate voltage collector current

ICES

mA

VCE = 1700 V, VGE = 0 V, Tj = 25 °C

-

0.8

1

VCE = 1700 V, VGE = 0 V, Tj = 125 °C

-

3.2

-

Gate-emitter leakage current

IGES

nA

VGE = 20 V, VCE = 0 V

-

-

320

AC Characteristics

Transconductance

gfs

S

VCE = 20 V, IC = 100 A

36

-

-

Input capacitance

Ciss

nF

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

16

-

Output capacitance

Coss

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

1.3

-

Reverse transfer capacitance

Crss

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

0.5

-

Semiconductor Group

2

Aug-01-1996

Share Link: