DIM400DCM17-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM400DCM17-A000 Datasheet PDF : 8 Pages
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DIM400DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Qrr
Irr
Erec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Tcase = 125°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Qrr
Irr
Erec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
IC = 400A
VGE = ±15V
VCE = 900V
RG(ON) = 4.7
RG(OFF) = 4.7
LS ~ 100nH
IGBT arm
IF = 400A
VCE = 900V
dIF/dt = 2000A/μs
Diode arm
IF = 400A
VCE = 900V
dIF/dt = 2000A/μs
Min Typ. Max Units
1150
ns
100
ns
120
mJ
250
ns
250
ns
150
mJ
100
μC
230
A
70
mJ
130
μC
300
A
90
mJ
Test Conditions
IC = 400A
VGE = ±15V
VCE = 900V
RG(ON) = 4.7
RG(OFF) = 4.7
LS ~ 100nH
IGBT arm
IF = 400A
VCE = 900V
dIF/dt = 2000A/μs
Diode arm
IF = 400A
VCE = 900V
dIF/dt = 2000A/μs
Min Typ. Max Units
1400
ns
130
ns
180
mJ
400
ns
250
ns
170
mJ
170
μC
270
A
100
mJ
220
μC
350
A
130
mJ
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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