DIM400DCM17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM400DCM17-A000 Datasheet PDF : 11 Pages
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DIM400DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
tf
Fall time
EOFF
Turn-off energy loss
t
Turn-on delay time
d(on)
tr
Rise time
EON
Turn-on energy loss
Qg
Gate charge
Q
Diode reverse recovery charge Diode arm
rr
IGBT arm
I
Diode reverse recovery current Diode arm
rr
IGBT arm
Erec
Diode reverse recovery energy Diode arm
IGBT arm
Test Conditions
IC = 400A
V
GE
=
±15V
VCE = 900V
RG(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
IF = 400A,
VR = 50% VCES,
dI /dt
F
=
2000A/µs
Min. Typ. Max. Units
-
1150
-
ns
-
100
-
ns
-
120
-
mJ
-
250
-
ns
-
250
-
ns
-
150
-
mJ
-
4.5
-
µC
-
250
-
µC
-
100
-
µC
-
530
-
A
-
230
-
A
-
160
-
mJ
-
70
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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