DIM400DCM17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DIM400DCM17-A000
(Rev.:2002)

IGBT Chopper Module

Dynex Semiconductor 

DIM400DCM17-A000

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise.

Symbol

Parameter

Test Conditions

I

Collector cut-off current

CES

IGES

VGE(TH)

V†

CE(sat)

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

IF

Diode forward current

IFM

Diode maximum forward current

VF†

Diode forward voltage (IGBT arm)

Diode forward voltage (Diode arm)

V = 0V, V = V

GE

CE

CES

VGE = 0V, VCE = VCES, Tcase = 125˚C

VGE = ±20V, VCE = 0V

I = 20mA, V = V

C

GE

CE

VGE = 15V, IC = 400A

VGE = 15V, IC = 400A, , Tcase = 125˚C

DC

t = 1ms

p

IF = 400A

Diode forward voltage (IGBT arm)

Diode forward voltage (Diode arm)

IF = 400A, Tcase = 125˚C

Cies

Input capacitance

Cres

Reverse transfer capacitance

VCE = 25V, VGE = 0V, f = 1MHz

VCE = 25V, VGE = 0V, f = 1MHz

LM

RINT

SC

Data

Module inductance - per arm

Internal transistor resistance - per arm

Short circuit. ISC

-

-

Tj = 125˚C, VCC = 1000V,

I1

tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2

IEC 60747-9

Note:

† Measured at the power busbars and not the auxiliary terminals)

* L is the circuit inductance + LM

Min. Typ. Max. Units

-

-

1

mA

-

-

12 mA

-

-

2

µA

4.5

5.5

6.5

V

-

2.7

3.2

V

-

3.4

4.0

V

-

-

400 A

-

-

800 A

-

2.2

2.5

V

-

1.8

2.1

V

-

2.3

2.6

V

-

1.8

2.1

V

-

30

-

nF

-

2.5

-

nF

-

20

-

nH

-

0.27

-

mΩ

-

1850

-

A

-

1600

-

A

4/11

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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