DIM400DCM17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DIM400DCM17-A000
(Rev.:2002)

IGBT Chopper Module

Dynex Semiconductor 

DIM400DCM17-A000

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety

precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

T = 25˚C unless stated otherwise

case

Symbol

Parameter

Test Conditions

Max. Units

V

CES

VGES

IC

IC(PK)

P

max

I2t

Collector-emitter voltage

VGE = 0V

Gate-emitter voltage

-

Continuous collector current

T = 75˚C

case

Peak collector current

1ms, Tcase = 105˚C

Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C

Diode I2t value (IGBT arm)

VR = 0, tp = 10ms, Tvj = 125˚C

Diode I2t value (Diode arm)

1700 V

±20 V

400 A

800 A

3470 W

30 kA2s

120 kA2s

V

Isolation voltage - per module

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

isol

QPD

Partial discharge - per module

IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS

4000 V

10 pC

2/11

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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