DIM2400ESM17-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM2400ESM17-A000 Datasheet PDF : 8 Pages
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DIM2400ESM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Tcase = 125°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
IC = 2400A
VGE = ±15V
VCE = 900V
RG(ON) = 1.0
RG(OFF) = 1.0
LS ~ 50nH
IF = 2400A
VCE = 900V
dIF/dt = 8500A/μs
Min Typ. Max Units
2000
ns
200
ns
900
mJ
800
ns
300
ns
475
mJ
450
μC
1200
A
300
mJ
Test Conditions
IC = 2400A
VGE = ±15V
VCE = 900V
RG(ON) = 1.0
RG(OFF) = 1.0
LS ~ 50nH
IF = 2400A
VCE = 900V
dIF/dt = 8000A/μs
Min Typ. Max Units
2300
ns
250
ns
1200
mJ
900
ns
300
ns
750
mJ
750
μC
1400
A
600
mJ
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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