DIM2400ESM17-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM2400ESM17-A000 Datasheet PDF : 8 Pages
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DIM2400ESM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES Collector cut-off current
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125°C
3
mA
75 mA
IGES Gate leakage current
VGE = ± 20V, VCE = 0V
12 μA
VGE(TH) Gate threshold voltage
IC = 120mA, VGE = VCE
4.5 5.5 6.5
V
VCE(sat) †
Collector-emitter
saturation voltage
VGE = 15V, IC = 2400A
VGE = 15V, IC = 2400A, Tj = 125°C
2.7 3.2
V
3.4 4.0
V
IF
Diode forward current
DC
2400 A
IFM Diode maximum forward current tp = 1ms
4800 A
VF † Diode forward voltage
IF = 2400A
IF = 2400A, Tj = 125°C
2.2 2.5
V
2.3 2.6
V
Cies Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
180
nF
Qg Gate charge
±15V
27
μC
Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz
nF
LM Module inductance
10
nH
RINT Internal transistor resistance
90
μ
SCData Short circuit current, ISC
Tj = 125°C, VCC = 1000V
tp ≤ 10μs, VGE ≤ 15V
VCE (max) = VCES – L* x dI/dt
IEC 60747-9
9600
A
Note:
† Measured at the power busbars, not the auxiliary terminals
* L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3/8
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