DIM800FSM17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DIM800FSM17-A000
(Rev.:2002)

Single Switch IGBT Module

Dynex Semiconductor 

DIM2400ESM17-A000

100

1

2

3

4

IGBT

Diode

Ri (˚C/KW) 0.1463 1.0645 1.3821 3.4118

τi (ms)

0.045 2.8869 21.7141 152.6381

Ri (˚C/KW) 0.5204 1.9142 2.333 8.5356

τi (ms) 0.0063516 1.4746 13.9664 111.7515

Diode

10

Transistor

1

0.1

0.001

0.01

0.1

1

10

Pulse width, tp - (s)

Fig. 11 Transient thermal impedance

4800

4400

4000

3600

3200

2800

2400

2000

1600

1200

800

400

0

0

20 40 60 80 100 120 140 160

Case temperature, Tcase - (˚C)

Fig. 12 DC current rating vs case temperature

8/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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