DIM800FSM17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DIM800FSM17-A000
(Rev.:2002)

Single Switch IGBT Module

Dynex Semiconductor 

DIM2400ESM17-A000

4800

4200

Tj = 25˚C

Tj = 125˚C

VF is measured at power busbars

and not the auxiliary terminals

3600

3000

2400

1800

1200

600

0

0

0.5

1.0 1.5 2.0 2.5 3.0 3.5

Foward voltage, VF - (V)

Fig. 7 Diode typical forward characteristics

5000

4500

4000

3500

3000

2500

2000

1500

1000

500 Tcase = 125˚C

Vge = 15V

0

0 200 400 600

Module IC

Chip IC

800 1000 1200 1400 1600 1800

Collector emitter voltage, Vce - (V)

Fig. 8 Reverse bias safe operating area

2500

Tcase =125˚C

10000

2000

1000

1500

1000

100

IC(max) DC

tp = 50µs

tp = 100µs

tp = 1ms

500

0

0 200 400 600 800 1000 1200 1400 1600 1800

Reverse voltage, VR - (V)

Fig. 9 Diode reverse bias safe operating area

10

Tvj = 125˚C,

Tc = 75˚C

1

1

10

100

1000

Collector emitter voltage, Vce - (V)

Fig. 10 Forward bias safe operating area

10000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

7/10

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