DIM800FSM17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM800FSM17-A000 Datasheet PDF : 10 Pages
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ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
t
f
EOFF
td(on)
tr
EO
Q
g
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
t
d(off)
tf
EOFF
td(on)
tr
EON
Qrr
I
rr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM2400ESM17-A000
Test Conditions
IC = 2400A
V
GE
=
±15V
VCE = 900V
RG(ON) = RG(OFF) = 1.0Ω
L ~ 50nH
IF = 2400A, VR = 50% VCES,
dI /dt
F
=
8500A/µs
Min. Typ. Max. Units
-
2000
-
ns
-
200
-
ns
-
900
-
mJ
-
800
-
ns
-
300
-
ns
-
475
-
mJ
-
27
-
µC
-
450
-
µC
-
1200
-
A
300
mJ
Test Conditions
IC = 2400A
VGE = ±15V
V = 900V
CE
RG(ON) = RG(OFF) = 1.0Ω
L ~ 50nH
IF = 2400A, VR = 50% VCES,
dIF/dt = 8000A/µs
Min. Typ. Max. Units
-
2300
-
ns
-
250
-
ns
-
1200
-
mJ
-
900
-
ns
-
300
-
ns
-
750
-
mJ
-
750
-
µC
-
1400
-
A
-
600
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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