DIM800FSM17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DIM800FSM17-A000
(Rev.:2002)

Single Switch IGBT Module

Dynex Semiconductor 

DIM2400ESM17-A000

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise.

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

ICES

Collector cut-off current

VGE = 0V, VCE = VCES

I

Gate leakage current

GES

VGE = 0V, VCE = VCES, Tcase = 125˚C

VGE = ±20V, VCE = 0V

VGE(TH)

Gate threshold voltage

IC =120mA, VGE = VCE

V†

CE(sat)

Collector-emitter saturation voltage

V = 15V, I = 2400A

GE

C

VGE = 15V, IC = 2400A, , Tcase = 125˚C

I

Diode forward current

DC

F

IFM

Diode maximum forward current

tp = 1ms

VF†

Diode forward voltage

I = 2400A

F

IF = 2400A, Tcase = 125˚C

C

Input capacitance

ies

VCE = 25V, VGE = 0V, f = 1MHz

LM

Module inductance

-

RINT

Internal transistor resistance

-

SC

Data

Short circuit. ISC

Tj = 125˚C, VCC = 1000V,

I1

tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2

IEC 60747-9

Note:

† Measured at the power busbars and not the auxiliary

terminals)

* L is the circuit inductance + LM

-

-

3

mA

-

-

75 mA

-

-

12 µA

4.5

5.5

6.5

V

-

2.7

3.2

V

-

3.4

4.0

V

-

-

2400 A

-

-

4800 A

-

2.2

2.5

V

-

2.3

2.6

V

-

180

-

nF

-

10

-

nH

-

0.27

-

mΩ

- 11000 -

A

-

9600

-

A

4/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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