DIM800FSM17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DIM800FSM17-A000 Datasheet PDF : 10 Pages
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DIM2400ESM17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
VCES
V
GES
IC
IC(PK)
Pmax
I2t
V
isol
QPD
Collector-emitter voltage
VGE = 0V
Gate-emitter voltage
-
Continuous collector current
Tcase = 75˚C
Peak collector current
1ms, Tcase = 105˚C
Max. transistor power dissipation T = 25˚C, T = 150˚C
case
j
Diode I2t value (IGBT arm)
VR = 0, tp = 10ms, Tvj = 125˚C
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Partial discharge - per module
IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS
Max. Units
1700 V
±20 V
2400 A
4800 A
20.8 kW
1080 kA2s
4000 V
10 PC
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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