DIM600DCM17-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM600DCM17-A000 Datasheet PDF : 8 Pages
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DIM600DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Tcase = 125°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
IC = 600A
VGE = ±15V
VCE = 900V
RG(ON) = 3.3
RG(OFF) = 3.3
LS ~ 100nH
Diode arm
IF = 600A
VCE = 900V
dIF/dt = 3000A/μs
Min Typ. Max Units
1200
ns
140
ns
190
mJ
250
ns
250
ns
220
mJ
150
μC
350
A
100
mJ
Test Conditions
IC = 600A
VGE = ±15V
VCE = 900V
RG(ON) = 3.3
RG(OFF) = 3.3
LS ~ 100nH
Diode arm
IF = 600A
VCE = 900V
dIF/dt = 3000A/μs
Min Typ. Max Units
1500
ns
170
ns
270
mJ
400
ns
250
ns
350
mJ
250
μC
400
A
150
mJ
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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