DIM800FSS17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DIM800FSS17-A000 Datasheet PDF : 11 Pages
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DIM600DCM17-A000
2000
1800
1600
1400
1200
1000
Chip
800
Module
600
400
Tcase = 125˚C
200 Vge = ±15V
Rg(min) = 2.2Ω
0
0
400
800
1200
1600
Collector-emitter voltage, Vce - (V)
Fig. 7 Reverse bias safe operating area
2000
10000
Tvj = 125˚C, Tc = 70˚C
800
700
600
500
400
300
200
100
Tj = 125˚C
0
0
400
800
1200
1600
Reverse voltage, VR - (V)
2000
Fig. 8 Diode reverse bias safe operating area
100
Freewheel and
Antiparallel Diode
1000
Transistor
100
IC(max) DC
10
10
tp = 50µs
tp = 100µs
tp = 1 ms
1
1
10
100
1000
10000
Collector-emitter voltage, Vce - (V)
Fig. 9 Forward bias safe operating area
1
0.001
0.01
0.1
1
10
Pulse width, tp - (s)
1
2
3
4
IGBT
Ri (˚C/KW) 0.65865 5.7785 6.2197 15.3534
τi (ms)
0.045 2.8869 21.7141 152.6381
Freewheel and Ri (˚C/KW) 1.5612 5.7426 6.999 25.6068
Antiparallel Diode τi (ms) 0.0063516 1.4746 13.9664 111.7517
Fig. 10 Transient thermal impedance
8/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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