DIM800FSS17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DIM800FSS17-A000
(Rev.:2002)

IGBT Chopper Module

Dynex Semiconductor 

DIM600DCM17-A000

ELECTRICAL CHARACTERISTICS

Tcase = 125˚C unless stated otherwise

Symbol

Parameter

td(off)

Turn-off delay time

t

Fall time

f

EOFF

Turn-off energy loss

td(on)

Turn-on delay time

tr

Rise time

EON

Turn-on energy loss

Qrr

Diode reverse recovery charge Diode arm

IGBT arm

Irr

Diode reverse recovery current Diode arm

IGBT arm

Erec

Diode reverse recovery energy Diode arm

IGBT arm

Test Conditions

IC = 600A

VGE = ±15V

VCE = 900V

R

G(ON)

=

R

G(OFF)

=

3.3Ω

L ~ 100nH

IF = 600A,

VR = 50% VCES,

dIF/dt = 3000A/µs

Min. Typ. Max. Units

-

1500

-

ns

-

170

-

ns

-

270

-

mJ

-

400

-

ns

-

250

-

ns

-

350

-

mJ

-

650

-

µC

-

250

-

µC

-

900

-

A

-

400

-

A

-

380

-

mJ

-

150

-

mJ

6/11

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

Share Link: