DIM800FSS17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM800FSS17-A000 Datasheet PDF : 11 Pages
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DIM600DCM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
tf
Fall time
E
Turn-off energy loss
OFF
td(on)
Turn-on delay time
tr
Rise time
EON
Turn-on energy loss
Q
Gate charge
g
Qrr
Diode reverse recovery charge Diode arm
IGBT arm
Irr
Diode reverse recovery current Diode arm
IGBT arm
Erec
Diode reverse recovery energy Diode arm
IGBT arm
Test Conditions
IC = 600A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 3.3Ω
L ~ 100nH
IF = 600A,
VR = 50% VCES,
dI /dt
F
=
3000A/µs
Min. Typ. Max. Units
-
1200
-
ns
-
140
-
ns
-
190
-
mJ
-
250
-
ns
-
250
-
ns
-
220
-
mJ
-
6.8
-
µC
-
370
-
µC
-
150
-
µC
-
800
-
A
-
350
-
A
-
250
-
mJ
-
100
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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