DIM800FSS17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DIM800FSS17-A000 Datasheet PDF : 11 Pages
| |||
DIM600DCM17-A000
ELECTRICAL CHARACTERISTICS
T = 25˚C unless stated otherwise.
case
Symbol
Parameter
Test Conditions
ICES
Collector cut-off current
IGES
V
GE(TH)
V†
CE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
IF
Diode forward current
I
Diode maximum forward current
FM
VF†
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
VGE = 0V, VCE = VCES
V = 0V, V = V , T = 125˚C
GE
CE
CES case
VGE = ±20V, VCE = 0V
IC = 30mA, VGE = VCE
VGE = 15V, IC = 600A
V = 15V, I = 600A, , T = 125˚C
GE
C
case
DC
tp = 1ms
IF = 600A
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
IF = 600A, Tcase = 125˚C
Cies
Cres
L
M
RINT
SCData
Input capacitance
Reverse transfer capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. I
SC
V = 25V, V = 0V, f = 1MHz
CE
GE
VCE = 25V, VGE = 0V, f = 1MHz
-
-
T = 125˚C, V = 1000V,
I
j
CC
1
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2
IEC 60747-9
Note:
† Measured at the power busbars and not the auxiliary terminals)
* L is the circuit inductance + LM
Min. Typ. Max. Units
-
-
1
mA
-
-
20 mA
-
-
4
µA
4.5
5.5 6.5
V
-
2.7 3.2
V
-
3.4 4.0
V
-
-
600 A
-
-
1200 A
-
2.0 2.3
V
-
2.0 2.3
V
-
2.1 2.4
V
-
2.1 2.4
V
-
45
-
nF
-
3.8
-
nF
-
20
-
nH
-
0.27
-
mΩ
2780
-
A
2400
-
A
4/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Share Link: 