DIM200MHS17-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DIM200MHS17-A000 Datasheet PDF : 10 Pages
| |||
DIM200MHS17-A000
400
VF is measured at power busbars
and not the auxiliary terminals
350
300
Tj = 25˚C
250
Tj = 125˚C
200
150
100
50
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
450
400
350
Chip
300
Module
250
200
150
100
Conditions:
50
Tcase = 125˚C
Vge = 15V
Rg(off) = 4.7ohms
0
0 200 400 600
800 1000 1200 1400 1600 1800
Collector emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
200
175
150
125
100
75
50
25
Tj = 125˚C
0
0
400
800
1200
1600
Reverse voltage, VR - (V)
2000
Fig. 9 Diode reverse bias safe operating area
1000
100
10
IC(max) DC
1
tp = 50µs
tp = 100µs
tp = 1 ms
0.1 Tvj = 125˚C, Tc = 65˚C
1
10
100
1000
Collector emitter voltage, Vce - (V)
10000
Fig. 10 Forward bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
www.dynexsemi.com
Share Link: 