DIM200MHS17-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DIM200MHS17-A000 Datasheet PDF : 10 Pages
| |||
DIM200MHS17-A000
TYPICAL CHARACTERISTICS
400
Common emitter.
Tcase = 25˚C
350 Vce is measured at power busbars
and not the auxiliary terminals
300
250
200
150
100
50
0
0
VGE = 20V
15V
12V
10V
0.5 1 1.5 2 2.5 3 3.5 4
Collector-emitter voltage, Vce - (V)
4.5 5
Fig. 3 Typical output characteristics
400
Common emitter.
Tcase = 125˚C
350 Vce is measured at power busbars
and not the auxiliary terminals
300
250
200
150
100
VGE = 20V
50
15V
12V
10V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
80
Conditions:
Tc = 125˚C,
70 Rg = 4.7Ω,
Vcc = 900V
60
50
40
30
20
10
Eon
Eoff
Erec
0
0 20 40 60 80 100 120 140 160 180 200
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
120
Conditions:
Tc = 125˚C,
IC = 200A,
100 Vcc = 900V
80
60
40
20
Eon
Eoff
Erec
0
4
5
6
7
8
9
10
Gate resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Share Link: 