DIM200MHS17-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM200MHS17-A000 Datasheet PDF : 10 Pages
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ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
td(off)
t
f
EOFF
td(on)
tr
E
ON
Qg
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
t
d(on)
tr
E
ON
Qrr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM200MHS17-A000
Test Conditions
IC = 200A
VGE = ±15V
VCE = 900V
R
G(ON)
=
R
G(OFF)
=
4.7Ω
L ~ 100nH
I = 200A, V = 900V,
F
R
dIF/dt = 3000A/µs
Min. Typ. Max. Units
-
590
-
ns
-
300
-
ns
-
40
-
mJ
-
320
-
ns
-
90
-
ns
-
50
-
mJ
-
-
-
µC
-
65
-
µC
-
195
-
A
-
42
-
mJ
Test Conditions
IC = 200A
V
GE
=
±15V
VCE = 900V
RG(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
IF = 200A, VR = 900V,
dI /dt
F
=
2500A/µs
Min. Typ. Max. Units
-
880
-
ns
-
410
-
ns
-
60
-
mJ
-
110
-
ns
-
450
-
ns
-
85
-
mJ
-
100
-
µC
-
195
-
A
-
64
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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