DIM200MHS17-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM200MHS17-A000 Datasheet PDF : 10 Pages
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DIM200MHS17-A000
ELECTRICAL CHARACTERISTICS
T = 25˚C unless stated otherwise.
case
Symbol
Parameter
Test Conditions
ICES
Collector cut-off current
VGE = 0V, VCE = VCES
V = 0V, V = V , T = 125˚C
GE
CE
CES case
IGES
Gate leakage current
VGE = ±20V, VCE = 0V
V
GE(TH)
Gate threshold voltage
IC = 10mA, VGE = VCE
V†
CE(sat)
Collector-emitter saturation voltage
VGE = 15V, IC = 200A
V = 15V, I = 200A, , T = 125˚C
GE
C
case
IF
Diode forward current
DC
I
Diode maximum forward current
FM
tp = 1ms
VF†
Diode forward voltage
IF = 200A
I = 200A, T = 125˚C
F
case
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
LM
Module inductance - per arm
-
RINT
Internal transistor resistance - per arm
-
SCData
Short circuit. ISC
Tj = 125˚C, VCC = 1000V,
I1
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2
IEC 60747-9
Note:
† Measured at the power busbars and not the auxiliary terminals)
* L is the circuit inductance + LM
Min. Typ. Max. Units
-
-
1
mA
-
-
10 mA
-
-
1
µA
4.5
5.5 6.5
V
-
2.7 3.2
V
-
3.4 4.0
V
-
-
200 A
-
-
400 A
-
2.2 2.5
V
-
2.3 2.6
V
-
15
-
nF
-
30
-
nH
-
-
-
mΩ
-
900
-
A
-
800
-
A
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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