DIM200MHS17-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DIM200MHS17-A000

Half Bridge IGBT Module

Dynex Semiconductor 

DIM200MHS17-A000

THERMAL AND MECHANICAL RATINGS

Internal insulation material: Al2O3

Baseplate material:

Cu

Creepage distance:

20mm

Clearance:

8mm

CTI (Critical Tracking Index): 175

Symbol

Parameter

R

th(j-c)

Thermal resistance - transistor (per arm)

R

th(j-c)

Thermal resistance - diode (per arm)

Rth(c-h)

T

j

Thermal resistance - case to heatsink

(per module)

Junction temperature

Tstg

Storage temperature range

-

Screw torque

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

junction to case

Mounting torque 5Nm

(with mounting grease)

Transistor

Diode

-

Mounting - M6

Electrical connections - M6

Min. Typ. Max. Units

-

-

84 ˚C/kW

-

-

176 ˚C/kW

-

-

15 ˚C/kW

-

-

150 ˚C

-

-

125 ˚C

–40

-

125 ˚C

-

-

5

Nm

-

-

5

Nm

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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www.dynexsemi.com

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