DIM800DDM17-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM800DDM17-A000 Datasheet PDF : 8 Pages
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DIM800DDM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
ICES Collector cut-off current
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125°C
IGES Gate leakage current
VGE = ± 20V, VCE = 0V
VGE(TH) Gate threshold voltage
IC = 40mA, VGE = VCE
VCE(sat) †
Collector-emitter
saturation voltage
VGE = 15V, IC = 800A
VGE = 15V, IC = 800A, Tj = 125°C
IF
Diode forward current
DC
IFM Diode maximum forward current tp = 1ms
VF † Diode forward voltage
IF = 800A
IF = 800A, Tj = 125°C
Cies Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
Qg Gate charge
±15V
Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz
LM Module inductance – per switch
-
RINT
Internal transistor resistance –
per switch
-
SCData Short circuit current, ISC
Tj = 125°C, VCC = 1000V
I1
tp ≤ 10μs, VGE ≤ 15V
VCE (max) = VCES – L* x dI/dt
IEC 60747-9
I2
Min Typ Max Units
1
mA
25 mA
4
μA
4.5 5.5 6.5
V
2.7 3.2
V
3.4 4.0
V
800 A
1600 A
2.2 2.5
V
2.3 2.6
V
60
nF
9
μC
-
nF
20
nH
270
μ
3700
A
3200
A
Note:
† Measured at the power busbars, not the auxiliary terminals
* L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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