DIM800DDM17-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM800DDM17-A000 Datasheet PDF : 8 Pages
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Replaces DS5433-4.1 July 2002
DIM800DDM17-A000
Dual Switch IGBT Module
DS5433-5 June 2009 (LN26751)
FEATURES
6 ±0.2
18 ±100.µ2s Short Circuit Withstand
High4T4he±r0m.2al Cycling Capability
Non Pun5ch7T±h0ro.2ugh Silicon
Isolated AlSiC Base with AlN Substrates
Lead Free construction
55.2 ± 0.3
1A1P.8P5LIC±0A.2TIONS
High Reliability Inverters
Motor Controllers
Traction Drives
KEY PARAMETERS
6 x O7
VCES
VCE(sat) * (typ)
IC
(max)
IC(PK) (max)
28 ±0.5
1700V
2s.7crVewing depth
8m00aAx 8
1600A
* Measured at the power busbars, not the auxiliary terminals
1(E)
5(E)
6(G)
2(C)
12(C)
11(G)
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM800DDM17-A000 is a dual switch 1700V, n-
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
7(C)
3(C)
4(E)
10(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM800DDM17-A000
Note: When ordering, please use the complete part
number
Outline type code: D
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
1/8
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