DIM800DDM17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DIM800DDM17-A000 Datasheet PDF : 10 Pages
| |||
DIM800DDM17-A000
1600
1400
Tj = 25˚C
Tj = 125˚C
VF is measured at power busbars
and not the auxiliary terminals
1200
1000
800
600
400
200
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
2000
1800
1600
1400
1200
1000
800
600
Chip
Module
400
Tcase = 125˚C
200 Vge = ±15V
Rg(min) = 2.2Ω
0
0
400
800
1200
1600
Collector-emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
2000
800
10000
Tvj = 125˚C, Tc = 75˚C
700
600
1000
500
400
100
IC(max) DC
tp = 50µs
300
tp = 100µs
10
tp = 1 ms
200
100
Tj = 125˚C
0
0
400
800
1200
1600
Reverse voltage, VR - (V)
2000
Fig. 9 Diode reverse bias safe operating area
1
1
10
100
1000
Collector-emitter voltage, Vce - (V)
Fig. 10 Forward bias safe operating area
10000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
www.dynexsemi.com
Share Link: 