DIM800DDM17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM800DDM17-A000 Datasheet PDF : 10 Pages
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DIM800DDM17-A000
TYPICAL CHARACTERISTICS
1800
1600
Common emitter
Tcase = 25˚C
Vce is measured at power busbars
and not the auxiliary terminals
1400
1200
1000
800
600
400
200
0
0
VGE = 20V
15V
12V
10V
0.5 1 1.5 2 2.5 3 3.5 4
Collector-emitter voltage, Vce - (V)
4.5 5
Fig. 3 Typical output characteristics
1800
1600
1400
Common emitter
Tcase = 125˚C
Vce is measured at power busbars
and not the auxiliary terminals
1200
1000
800
600
400
VGE = 20V
200
15V
12V
10V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
400
Conditions:
Vce = 900V
350 Tc = 125°C
Rg = 2.2Ω
300
250
200
150
100
50
Eon
Eoff
Erec
0
0
200
400
600
800
1000
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
800
Conditions:
Vce = 900V
IC = 800A
Tc = 125°C
600
400
200
Eoff
Eon
Erec
0
0
2
4
6
8
10
12
Gate Resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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