DIM800DDM17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM800DDM17-A000 Datasheet PDF : 10 Pages
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ELECTRICAL CHARACTERISTICS
T = 25˚C unless stated otherwise
case
Symbol
Parameter
td(off)
tf
E
OFF
td(on)
tr
EON
Q
g
Qrr
Irr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
t
d(off)
tf
EOFF
td(on)
t
r
EON
Q
rr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
DIM800DDM17-A000
Test Conditions
I = 800A
C
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 2.2Ω
L ~ 100nH
IF = 800A, VR = 900V,
dIF/dt = 4000A/µs
Min. Typ. Max. Units
-
1250
-
ns
-
170
-
ns
-
230
-
mJ
-
250
-
ns
-
250
-
ns
-
220
-
mJ
-
9.0
-
µC
-
200
-
µC
-
460
-
A
-
130
-
mJ
Test Conditions
IC = 800A
VGE = ±15V
V = 900V
CE
RG(ON) = RG(OFF) = 2.2Ω
L ~ 100nH
I = 800A, V = 900V,
F
R
dIF/dt = 4000A/µs
Min. Typ. Max. Units
-
1500
-
ns
-
200
-
ns
-
360
-
mJ
-
400
-
ns
-
250
-
ns
-
340
-
mJ
-
330
-
µC
-
530
-
A
-
200
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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