DIM800DDM17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DIM800DDM17-A000
(Rev.:2002)

Dual Switch IGBT Module

Dynex Semiconductor 

DIM800DDM17-A000

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise.

Symbol

Parameter

Test Conditions

I

Collector cut-off current

CES

VGE = 0V, VCE = VCES

VGE = 0V, VCE = VCES, Tcase = 125˚C

IGES

Gate leakage current

V

GE

=

±20V,

V

CE

=

0V

VGE(TH)

Gate threshold voltage

IC = 40mA, VGE = VCE

V † Collector-emitter saturation voltage

CE(sat)

VGE = 15V, IC = 800A

VGE = 15V, IC = 800A, , Tcase = 125˚C

IF

Diode forward current

DC

IFM

Diode maximum forward current

tp = 1ms

VF†

Diode forward voltage

IF = 800A

IF = 800A, Tcase = 125˚C

Cies

Input capacitance

VCE = 25V, VGE = 0V, f = 1MHz

L

Module inductance - per arm

-

M

RINT

Internal transistor resistance - per arm

-

SCData

Short circuit. I

SC

T = 125˚C, V = 1000V,

I

j

CC

1

tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2

IEC 60747-9

Note:

† Measured at the power busbars and not the auxiliary terminals)

* L is the circuit inductance + LM

Min. Typ. Max. Units

-

-

1

mA

-

-

25 mA

-

-

4

µA

4.5

5.5 6.5

V

-

2.7 3.2

V

-

3.4 4.0

V

-

-

800 A

-

-

1600 A

-

2.2 2.5

V

-

2.3 2.6

V

-

60

-

nF

-

20

-

nH

-

0.27

-

mΩ

-

3700

-

A

-

3200

-

A

4/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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