IXA33IF1200HB Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXA33IF1200HB Datasheet PDF : 6 Pages
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IXA33IF1200HB
IGBT
50
VGE = 15 V
40
IC 30
[A]
20
TVJ = 25°C
TVJ = 125°C
10
50
VGE = 15 V
17 V
19 V
40
TVJ = 125°C
IC 30
[A] 20
10
13 V
11 V
9V
0
0
1
2
3
VCE [V]
Fig. 1 Typ. output characteristics
50
40
IC 30
[A]
20
10
TVJ = 125°C
TVJ = 25°C
0
5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 3 Typ. tranfer characteristics
6 RG = 39
Eon
VCE = 600 V
5 VGE = ±15 V
TVJ = 125°C
4
Eoff
E
3
[mJ]
2
1
0
0 10 20 30 40 50
IC [A]
Fig. 5 Typ. switching energy vs. collector current
0
0
1
2
3
4
5
VCE [V]
Fig. 2 Typ. output characteristics
20
IC = 25 A
VCE = 600 V
15
VGE 10
[V]
5
0
0 20 40 60 80 100
QG [nC]
Fig. 4 Typ. turn-on gate charge
4
IC = 25 A
Eon
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
Eoff
3
E
[mJ]
2
1
40 60 80 100 120 140
RG [ ]
Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, conditions and dimensions.
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Data according to IEC 60747and per semiconductor unless otherwise specified
20100702b
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