IRFP460C Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
IRFP460C Datasheet PDF : 8 Pages
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Typical Characteristics
V
Top : 15.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.0
0.8
VGS = 10V
0.6
0.4
V = 20V
GS
0.2
※ Note : TJ = 25℃
0.0
0
10
20
30
40
50
60
70
80
90
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
10000
8000
6000
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
2000
C
oss
Crss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
102
101
150oC
25oC
100
10-1
2
-55oC
※ Notes :
1. V = 50V
2. 25DS0μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 100V
10
DS
V = 250V
DS
8
V = 400V
DS
6
4
2
※ Note : ID = 20.0 A
0
0
30
60
90
120
150
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Dimensions in Millimeters
Rev. A, February 2002
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