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IRFP460C

500V N-Channel MOSFET

Fairchild Semiconductor 

February 2002

IRFP460C

500V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies and

power factor corrections.

Features

• 20A, 500V, RDS(on) = 0.24Ω @VGS = 10 V

• Low gate charge ( typical 130nC)

• Low Crss ( typical 60 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G DS

TO-3P

IRFP Series

G!

D

!

●

◀▲

●

●

!

S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VDSS

ID

IDM

VGSS

EAS

IAR

EAR

dv/dt

PD

TJ, TSTG

TL

Parameter

Drain-Source Voltage

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

Drain Current - Pulsed

(Note 1)

Gate-Source Voltage

Single Pulsed Avalanche Energy

(Note 2)

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

IRFP460C

500

20

12.5

80

± 30

1050

20

23.5

4.5

235

1.88

-55 to +150

300

Thermal Characteristics

Symbol

RθJC

RθCS

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

--

0.53

0.24

--

--

40

Units

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Units

°C/W

°C/W

°C/W

©2002 Fairchild Semiconductor Corporation

Rev. A, February 2002

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