IRFP15N60L(2008) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

IRFP15N60L
(Rev.:2008)

Power MOSFET

Vishay Semiconductors 

IRFP15N60L, SiHFP15N60L

Vishay Siliconix

1000

100

OPERATION IN THIS AREA

LIMITED BY R DS(on)

10

100μsec

1

1msec

Tc = 25°C

Tj = 150°C

Single Pulse

0.1

10msec

1

10

100

1000

10000

VDS, Drain-to-Source Voltage (V)

Fig. 9 - Maximum Safe Operating Area

16

14

12

10

8

6

4

2

0

25

50

75

100 125 150

TC , Case Temperature (°C)

Fig. 10 - Maximum Drain Current vs. Case Temperature

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 11a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 11b - Switching Time Waveforms

Document Number: 91204

S-Pedning-Rev. B, 24-Jun-08

www.vishay.com

5

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