H8050-B Ver la hoja de datos (PDF) - TY Semiconductor
Número de pieza
componentes Descripción
Fabricante
H8050-B Datasheet PDF : 2 Pages
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SMD Type
■ Typical Characteristics
0.5
IB = 3.0mA
0.4
IB = 2.5mA
0.3
IB = 2.0mA
IB = 1.5mA
0.2
IB = 1.0mA
0.1
IB = 0.5mA
0
0.4
0.8
1.2
1.6
2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10000
1000
VBE(sat)
IC = 10 IB
100
VCE(sat)
10
0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
IE = 0
f = 1MHz
10
1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
Transistors
s Product specification
H8050
1000
100
VCE = 1V
10
1
0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
100
VCE = 1V
10
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1000
100
VCE = 10V
10
1
1
10
100
400
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
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